An ICP RIE (Inductively Coupled Plasma Reactive Ion Etcher) is a tool used to selectively etch dielectrics, polymers, and metals. Ions are accelerated towards a substrate where both chemical and physical etching occur at the surface allowing high etch rates and anisotropic profiles. This tool incorporates two separate power supplies, one to generate the plasma and the other to control the ion acceleration towards the substrate. This allows great flexibility and control in the creation of a custom process. This system is also equipped with helium backside cooling of the substrate and active liquid nitrogen cooling of the chuck.
- Automatic Load Lock/Wafer Handling
- Plasma Generation Supply – 2MHz, 1500W
- Plasma Biasing Supply – 13.5MHz, 600W
- Gases: CF4, CHF3, Ar, O2, SF6, H2, Cl2, and N2