Expertech CTR 125 Furnace/LPCVD
 The LPCVD (Low Pressure Chemical Vapor Depositor) uses low pressures and high temperatures
                        (~660°C) to deposit a more uniform layer of silicon oxide compared to PECVD. This
                        system is composed of two tube furnaces, one which is plumbed with silane for silicon
                        dioxide deposition and the other for wet/dry thermal growth of silicon dioxide (~1100°C).
The LPCVD (Low Pressure Chemical Vapor Depositor) uses low pressures and high temperatures
                        (~660°C) to deposit a more uniform layer of silicon oxide compared to PECVD. This
                        system is composed of two tube furnaces, one which is plumbed with silane for silicon
                        dioxide deposition and the other for wet/dry thermal growth of silicon dioxide (~1100°C).
Furnace 1 - Standard Tube Furnace w/Bubbler: RT..1100degC
Furnace 2 - LPCVD w/SiH4 & H2: RT..670C