Oerlikon 790+ PECVD
The PECVD (Plasma Enhanced Chemical Vapor Depositor) reacts the delivered process
gases in an RF (radio frequency) induced plasma to deposit dielectric materials such
as silicon dioxide and silicon nitride. It has a round lower electrode whose diameter
is 16” and can accommodate single or multiple wafers to capacity. This electrode can
also be heated up to 350°C while the top electrode can be heated to 150°C with their
embedded resistive heaters. Current recipes are available for silicon dioxide, silicon
nitride, and oxygen cleaning.
Available gases are: SiH4 (5% silane in He), NH3, SF6, O2, N2, N2O, and He.